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Single-Wall Carbon Nanotube CVD Growth System

Introduction: Vertical CVD furnace for single-wall carbon nanotube (SWCNT) synthesis: silicon carbide tube up to Φ200 mm, three heating zones to 1300 °C and continuous collection.
Application:
Material: Single-wall carbon nanotube production
Nanoelectronic devices
Composite reinforcement
Energy storage materials
Catalysts and catalyst supports
Sensors and field emitters
Conductive films
Bio-nanomaterials

This chemical vapour deposition (CVD) system is designed specifically for growing single-wall carbon nanotubes. A dedicated gas-mixing design and preheated feed gas keep reaction conditions consistent, while ultrasonic multi-stage atomised feeding delivers the carbon source evenly for controlled, directional growth. The large-bore silicon carbide furnace tube raises output per run, and a vertical furnace with a rotating-shaft collector lets you remove product and amorphous carbon without stopping the furnace.

ModelSingle tubeMulti-tube
‌Furnace Tube Material‌Silicon carbideSilicon carbide
‌Furnace Tube Size (mm)‌Φ170×1700Φ200×1700 ×N
‌Heating Power (kW)‌65Configured to order
‌Heating Zones‌Three zones, 1700 mm heated lengthThree zones, 1700 mm heated length
‌Max. Temperature (℃)‌13001300
‌Heating Method‌Resistance heatingResistance heating
‌Temperature Sensor‌Type S Pt-Rh thermocoupleType S Pt-Rh thermocouple
‌Temperature Accuracy (℃)‌±1±1
‌Dimensions L×W×H (mm)‌3000×1800×4500Configured to order


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