| Introduction: | Vertical CVD furnace for single-wall carbon nanotube (SWCNT) synthesis: silicon carbide tube up to Φ200 mm, three heating zones to 1300 °C and continuous collection. |
| Application: | |
| Material: | Single-wall carbon nanotube production Nanoelectronic devices Composite reinforcement Energy storage materials Catalysts and catalyst supports Sensors and field emitters Conductive films Bio-nanomaterials |
This chemical vapour deposition (CVD) system is designed specifically for growing single-wall carbon nanotubes. A dedicated gas-mixing design and preheated feed gas keep reaction conditions consistent, while ultrasonic multi-stage atomised feeding delivers the carbon source evenly for controlled, directional growth. The large-bore silicon carbide furnace tube raises output per run, and a vertical furnace with a rotating-shaft collector lets you remove product and amorphous carbon without stopping the furnace.
| Model | Single tube | Multi-tube |
| Furnace Tube Material | Silicon carbide | Silicon carbide |
| Furnace Tube Size (mm) | Φ170×1700 | Φ200×1700 ×N |
| Heating Power (kW) | 65 | Configured to order |
| Heating Zones | Three zones, 1700 mm heated length | Three zones, 1700 mm heated length |
| Max. Temperature (℃) | 1300 | 1300 |
| Heating Method | Resistance heating | Resistance heating |
| Temperature Sensor | Type S Pt-Rh thermocouple | Type S Pt-Rh thermocouple |
| Temperature Accuracy (℃) | ±1 | ±1 |
| Dimensions L×W×H (mm) | 3000×1800×4500 | Configured to order |
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